Manufacturer Part Number
M29W640GB70NA6E
Manufacturer
Micron Technology
Introduction
High-density, high-performance parallel NOR flash memory device
Suitable for a wide range of embedded applications
Product Features and Performance
64Mbit memory capacity
70ns access time
Supports 2.7V to 3.6V operating voltage
Wide operating temperature range of -40°C to 85°C
FLASH NOR technology
Parallel memory interface
Product Advantages
High-density and high-performance for embedded applications
Reliable and robust design
Wide operating temperature range for diverse environments
Key Technical Parameters
Memory Size: 64Mbit
Memory Interface: Parallel
Access Time: 70ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
Tray packaging
Compatibility
Suitable for a wide range of embedded systems and applications
Application Areas
Embedded systems
Industrial control
Automotive electronics
Consumer electronics
Product Lifecycle
Mature and widely used product
Replacement and upgrade options available
Several Key Reasons to Choose This Product
High-density and high-performance for demanding embedded applications
Wide operating temperature range for use in diverse environments
Reliable and robust design for industrial and automotive applications
Compatibility with a wide range of embedded systems
Mature product with available replacement and upgrade options