Manufacturer Part Number
M29W400DT55N6
Manufacturer
Micron Technology
Introduction
High-performance NOR flash memory device
Suitable for embedded systems and consumer electronics applications
Product Features and Performance
4Mbit non-volatile flash memory
Parallel memory interface
55ns access time
7V to 3.6V operating voltage
Wide temperature range (-40°C to 85°C)
Fast write cycle time (55ns)
Supports 512K x 8 and 256K x 16 memory organization
Product Advantages
Reliable and durable NOR flash memory
High-speed performance for demanding applications
Wide operating temperature range for versatile usage
Low power consumption
Key Technical Parameters
Memory Size: 4Mbit
Memory Interface: Parallel
Access Time: 55ns
Write Cycle Time: 55ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Quality and Safety Features
RoHS3 compliant
48-TSOP I package for surface mount applications
Compatibility
Suitable for embedded systems, industrial equipment, consumer electronics, and other applications requiring high-performance NOR flash memory
Application Areas
Embedded systems
Industrial equipment
Consumer electronics
Automotive electronics
Telecommunications
Product Lifecycle
Current production model, not nearing discontinuation
Replacement or upgrade models available from Micron Technology
Key Reasons to Choose This Product
High-speed performance for demanding applications
Wide operating temperature range for versatile usage
Low power consumption for energy-efficient designs
Reliable and durable NOR flash memory
RoHS3 compliance for environmental friendliness
Surface mount package for easy integration
M29W400DT55N6TSTMicroelectronics
M29W400DB70N6FMicron Technology
M29W400DB70N6EMicron Technology Inc.IC FLASH 4MBIT PARALLEL 48TSOP I
M29W400DT55N6FNUMONYX