M29W400DB55N6E - Micron Technology Inc.

Manufacturer Part Number

M29W400DB55N6E

Manufacturer

Micron Technology

Introduction

The M29W400DB55N6E is a 4Mbit, non-volatile FLASH memory device utilizing NOR technology. It comes in a 48-TFSOP package and is designed for robust, high-performance data storage.

Product Features and Performance

Memory Size: 4Mbit

Memory Format: FLASH

Technology: FLASH NOR

Memory Organization: 512K x 8, 256K x 16

Memory Interface: Parallel

Write Cycle Time Word, Page: 55ns

Access Time: 55 ns

Product Advantages

Reliable data storage with quick access and writing times

Operates across a wide voltage range of 2.7V to 3.6V

Supports a broad operational temperature range from -40°C to 85°C

Key Technical Parameters

Voltage Supply: 2.7V ~ 3.6V

Operating Temperature: -40°C ~ 85°C (TA)

Write Cycle Time: 55ns

Access Time: 55 ns

Quality and Safety Features

Rigorous testing ensures reliability over varying temperatures and voltage conditions

Compatibility

Interface compatibility with systems requiring a parallel connection for FLASH memories

Application Areas

Embedded systems

Consumer electronics

Industrial applications

Automotive industry

Product Lifecycle

Status: Obsolete

Note: While this product is discontinued, alternatives or upgrades may be available.

Several Key Reasons to Choose This Product

Fast access and write speeds for enhanced performance in critical applications

Wide operating temperature and voltage ranges accommodate diverse environmental conditions

High reliability and compatibility ideal for embedded and industrial use