Manufacturer Part Number
JS28F512M29EWHA
Manufacturer
Micron Technology
Introduction
High-performance NOR flash memory integrated circuit
Designed for embedded applications requiring non-volatile storage
Product Features and Performance
512Mbit memory capacity
Parallel memory interface
110ns access time
7V to 3.6V operating voltage range
-40°C to 85°C operating temperature range
110ns write cycle time for word and page
Product Advantages
Reliable and durable non-volatile storage
High-speed data access and transfer
Wide operating voltage and temperature range
Efficient power consumption
Key Technical Parameters
Memory Size: 512Mbit
Memory Interface: Parallel
Access Time: 110ns
Operating Voltage: 2.7V to 3.6V
Operating Temperature: -40°C to 85°C
Write Cycle Time: 110ns (word, page)
Quality and Safety Features
RoHS3 compliant
Tray packaging for reliable handling and storage
Compatibility
Can be used in a wide range of embedded systems and applications
Application Areas
Embedded systems
Industrial automation
Automotive electronics
Telecommunications equipment
Consumer electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement and upgrade models available from Micron Technology
Key Reasons to Choose This Product
High-performance and reliable non-volatile storage
Wide operating voltage and temperature range
Efficient power consumption
RoHS3 compliance for environmental safety
Compatibility with a broad range of embedded applications
JS28F512M29EWHMicron Technology
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