Manufacturer Part Number
EDB4432BBBJ-1D-F-R
Manufacturer
Micron Technology
Introduction
The EDB4432BBBJ-1D-F-R is a high-capacity, low-power mobile LPDDR2 SDRAM designed for enhanced mobile computing and multimedia applications.
Product Features and Performance
Volatile Memory Type
Utilizes LPDDR2 SDRAM Technology
Organized as 128M x 32 for high storage capacity
Parallel Memory Interface allowing efficient access
Clock Frequency of 533 MHz for fast processing speeds
Operating Temperature ranging from -30°C to 85°C
Low voltage operation (1.14V ~ 1.95V)
Product Advantages
High memory capacity of 4Gbit for extensive data storage
Energy-efficient performance suitable for mobile applications
Robust temperature tolerance enhances device reliability in diverse environments
Key Technical Parameters
Memory Size: 4Gbit
Memory Organization: 128M x 32
Clock Frequency: 533 MHz
Voltage Supply: 1.14V ~ 1.95V
Operating Temperature: -30°C ~ 85°C (TC)
Quality and Safety Features
Rigorous testing across extreme temperature ranges ensures reliability
Designed following stringent safety standards for memory devices
Compatibility
Compatible with devices requiring mobile LPDDR2 SDRAM with parallel interface
Application Areas
Mobile Computing
Multimedia Devices
Advanced Smartphones
Portable Gaming Consoles
Product Lifecycle
Currently listed as Obsolete
Availability of replacements or upgrades needs to be confirmed from the manufacturer
Several Key Reasons to Choose This Product
Enhanced storage capacity suitable for advanced mobile devices
Low power consumption helping to extend device battery life
High reliability under varying environmental conditions
Speedy data processing capabilities essential for high-performance applications
Broad compatibility with existing mobile and multimedia technology architectures