Manufacturer Part Number
VP2450N3-G
Manufacturer
Microchip Technology
Introduction
High-voltage, p-channel MOSFET transistor for power management applications
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-to-source voltage rating of 500V
Low on-resistance of 30Ω @ 100mA, 10V
Input capacitance of 190pF @ 25V
Maximum power dissipation of 740mW
Product Advantages
Suitable for high-voltage, power management applications
Compact TO-92-3 through-hole package
Excellent thermal performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
Gate-to-Source Voltage (Vgs): ±20V
Drain Current (Id): 100mA
On-Resistance (Rds(on)): 30Ω @ 100mA, 10V
Input Capacitance (Ciss): 190pF @ 25V
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Industrial controls
Appliances
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Wide operating temperature range
High voltage handling capability
Low on-resistance for efficient power conversion
Compact through-hole package for easy integration
Reliable performance and quality assurance
VP22351LUMILEDS