VP2106N3-G - Microchip Technology

Manufacturer Part Number

VP2106N3-G

Manufacturer

Microchip Technology

Introduction

The VP2106N3-G is a P-channel MOSFET transistor from Microchip Technology, suitable for a wide range of applications.

Product Features and Performance

P-channel MOSFET transistor

Drain to Source Voltage (Vdss) of 60V

Gate to Source Voltage (Vgs) range of ±20V

On-Resistance (Rds(on)) of 12Ω @ 500mA, 10V

Continuous Drain Current (Id) of 250mA @ 25°C

Input Capacitance (Ciss) of 60pF @ 25V

Power Dissipation (Tc) of 1W

Operating Temperature range of -55°C to 150°C

Product Advantages

Suitable for a wide range of applications

Robust design with high voltage and current ratings

Low on-resistance for efficient power switching

Wide operating temperature range

Key Technical Parameters

Drain to Source Voltage (Vdss): 60V

Gate to Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 12Ω @ 500mA, 10V

Continuous Drain Current (Id): 250mA @ 25°C

Input Capacitance (Ciss): 60pF @ 25V

Power Dissipation (Tc): 1W

Operating Temperature: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Reliable through-hole package (TO-92-3)

Compatibility

Compatible with a wide range of electronic circuits and systems

Application Areas

Power switching

Amplifier circuits

Motor control

Battery management

General electronic applications

Product Lifecycle

Currently available

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Robust design with high voltage and current ratings

Low on-resistance for efficient power switching

Wide operating temperature range

RoHS3 compliance for environmental responsibility

Compatibility with a wide range of electronic applications