Manufacturer Part Number
VN3205N3-G
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Single
Product Features and Performance
RoHS3 Compliant
Through Hole Mounting
TO-92-3 Package
Operating Temperature: -55°C ~ 150°C
Drain to Source Voltage (Vdss): 50 V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds On): 300mOhm @ 3A, 10V
MOSFET Technology
Continuous Drain Current (Id): 1.2A @ 25°C
Input Capacitance (Ciss): 300 pF @ 25 V
Power Dissipation: 1W @ Tc
N-Channel FET Type
Threshold Voltage (Vgs(th)): 2.4V @ 10mA
Drive Voltage: 4.5V (max Rds On), 10V (min Rds On)
Product Advantages
RoHS3 Compliant
Wide Operating Temperature Range
Low On-State Resistance
High Continuous Drain Current Capability
Suitable for High-Power Applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 50 V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds On): 300mOhm @ 3A, 10V
Continuous Drain Current (Id): 1.2A @ 25°C
Input Capacitance (Ciss): 300 pF @ 25 V
Power Dissipation: 1W @ Tc
Threshold Voltage (Vgs(th)): 2.4V @ 10mA
Quality and Safety Features
RoHS3 Compliant
Wide Operating Temperature Range
Compatibility
TO-92-3 Package
Through Hole Mounting
Application Areas
High-Power Applications
Power Management Circuits
Switching Circuits
Amplifier Circuits
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from Microchip Technology.
Key Reasons to Choose This Product
RoHS3 Compliant
Wide Operating Temperature Range
Low On-State Resistance
High Continuous Drain Current Capability
Suitable for High-Power Applications
Proven reliability and performance from Microchip Technology
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