VN2210N3-G - Microchip Technology

Manufacturer Part Number

VN2210N3-G

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product

N-Channel MOSFET Transistor

Product Features and Performance

Wide operating temperature range: -55°C to 150°C

High drain-to-source voltage: 100V

Low on-resistance: 350mΩ @ 4A, 10V

High continuous drain current: 1.2A @ 25°C

Low input capacitance: 500pF @ 25V

High power dissipation: 740mW

Product Advantages

Suitable for a variety of power management and switching applications

Excellent thermal performance for reliable operation

Compact and efficient TO-92-3 package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 100V

Gate-to-Source Voltage (Vgs): ±20V

On-Resistance (Rds(on)): 350mΩ @ 4A, 10V

Continuous Drain Current (Id): 1.2A @ 25°C

Input Capacitance (Ciss): 500pF @ 25V

Power Dissipation (Pd): 740mW

Quality and Safety Features

RoHS3 compliant

Safe and reliable operation within specified parameters

Compatibility

TO-92-3 through-hole package

Compatible with a wide range of power management and switching applications

Application Areas

Power management circuits

Switching applications

Motor control

Voltage regulation

Battery charging and discharging

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement and upgrade options available if needed

Key Reasons to Choose This Product

Excellent performance and reliability in a compact package

Wide operating temperature range for versatile applications

Low on-resistance and high current capability for efficient power handling

RoHS3 compliance for environmental sustainability

Compatibility with various power management and switching circuits