Manufacturer Part Number
TP2104K1-G
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
P-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 6Ω @ 500mA, 10V
Continuous Drain Current (Id): 160mA
Input Capacitance (Ciss): 60pF @ 25V
Power Dissipation: 360mW
Operating Temperature: -55°C to 150°C
Product Advantages
Small Footprint Surface Mount Package
Low On-Resistance for Efficient Power Switching
Wide Operating Voltage and Temperature Range
Key Technical Parameters
MOSFET Technology
P-Channel FET Type
Threshold Voltage (Vgs(th)): 2V @ 1mA
Drive Voltage Range: 4.5V to 10V
Quality and Safety Features
RoHS3 Compliant
Reliable Semiconductor Construction
Compatibility
Suitable for a Variety of Electronic Circuits and Applications
Application Areas
Power Management
Switch Mode Power Supplies
Motor Control
Battery Charging
General Purpose Switching
Product Lifecycle
Currently in Production
Replacements and Upgrades Available
Key Reasons to Choose This Product
Efficient Power Switching Performance
Wide Operating Voltage and Temperature Range
Small Surface Mount Package for Compact Design
Reliable RoHS3 Compliant Construction
Compatibility with Various Electronic Applications
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