TN5325N8-G - Microchip Technology

Manufacturer Part Number

TN5325N8-G

Manufacturer

Microchip Technology

Introduction

The TN5325N8-G is a discrete MOSFET transistor product from Microchip Technology.

Product Features and Performance

N-Channel MOSFET

Drain-to-Source Voltage (Vdss) of 250V

Gate-to-Source Voltage (Vgs) range of ±20V

On-resistance (Rds(on)) of 7Ω @ 1A, 10V

Continuous Drain Current (Id) of 316mA @ 25°C

Input Capacitance (Ciss) of 110pF @ 25V

Power Dissipation (Pd) of 1.6W @ 25°C

Product Advantages

High breakdown voltage for various power applications

Low on-resistance for efficient power switching

Surface mount package for compact design

Key Technical Parameters

MOSFET Technology: N-Channel

Vdss: 250V

Vgs (Max): ±20V

Rds On (Max): 7Ω @ 1A, 10V

Id (Continuous): 316mA @ 25°C

Ciss (Max): 110pF @ 25V

Pd (Max): 1.6W @ 25°C

Quality and Safety Features

RoHS3 compliant

Compatibility

TO-243AA (SOT-89) surface mount package

Application Areas

Power switching

Voltage regulation

Motor control

Lighting control

Industrial automation

Product Lifecycle

Current product

Replacements and upgrades available

Key Reasons to Choose

High voltage capability

Low on-resistance for efficiency

Surface mount for compact design

RoHS3 compliance for environmental safety