Manufacturer Part Number
TC6320K6-G
Manufacturer
Microchip Technology
Introduction
The TC6320K6-G is a discrete semiconductor product, specifically a transistor - FET, MOSFET array from Microchip Technology.
Product Features and Performance
N and P-Channel MOSFET array
Drain to Source Voltage (Vdss) of 200V
RDS(on) of 7 Ohms @ 1A, 10V
Input Capacitance (Ciss) of 110pF @ 25V
Gate Threshold Voltage (Vgs(th)) of 2V @ 1mA
Operating Temperature range of -55°C to 150°C
Product Advantages
High voltage handling capability
Low on-resistance for efficient power switching
Compact 8-DFN (4x4) package for space-constrained designs
Surface mount for automated assembly
Key Technical Parameters
Discrete Semiconductor: Transistors FETs, MOSFETs Arrays
Configuration: N and P-Channel
Drain to Source Voltage (Vdss): 200V
RDS(on) (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
Vgs(th) (Max) @ Id: 2V @ 1mA
Quality and Safety Features
RoHS3 compliant
8-DFN (4x4) package with exposed pad for improved thermal performance
Compatibility
Surface mount package for automated assembly
Application Areas
Power switching
Motor control
Industrial and consumer electronics
Product Lifecycle
Current product, no indication of discontinuation
Replacements or upgrades may be available from Microchip Technology
Key Reasons to Choose This Product
High voltage handling up to 200V
Low on-resistance for efficient power switching
Compact surface mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
RoHS3 compliant for environmental considerations