TC4452VOA - Microchip Technology

Manufacturer Part Number

TC4452VOA

Manufacturer

Microchip Technology

Introduction

TC4452VOA is a high-speed Power Management (PMIC) Gate Driver designed for driving power MOSFETs and IGBTs.

Product Features and Performance

Low-Side Gate Driver

Single Channel Output

Supports IGBT, N-Channel and P-Channel MOSFET gate types

Supply voltage range from 4.5V to 18V

Non-Inverting Input

High Peak Output Current of 13A both Source and Sink

Quick Rise and Fall Times of 30ns and 32ns respectively

Wide Operating Temperature Range of -40°C to 150°C

Surface Mount 8-SOIC Package

Product Advantages

High Current Capability for driving large loads

Fast Switching Performance for improved efficiency

Compatible with a wide range of power devices

Robust Thermal Performance for high reliability

Compact 8-SOIC Package allows for smaller PCB design

Key Technical Parameters

Driven Configuration: Low-Side

Number of Drivers: 1

Voltage - Supply: 4.5V ~ 18V

Logic Voltage - VIL, VIH: 0.8V, 2.4V

Current - Peak Output (Source, Sink): 13A, 13A

Rise / Fall Time (Typ): 30ns, 32ns

Operating Temperature: -40°C ~ 150°C (TJ)

Quality and Safety Features

Extended temperature range ensures operation in harsh environments

Designed in accordance with industry standards for power management

Compatibility

Compatible with a variety of IGBTs and MOSFETs for flexible design options

Application Areas

Motor Control

Switching Power Supplies

Power Converters

LED Drivers

Automotive Electronics

Product Lifecycle

Product Status: Active

Not indicated as nearing discontinuation

Potential for subsequent product replacements or upgrades

Several Key Reasons to Choose This Product

High-Speed Operation for efficient switching

Wide Range of Operational Temperatures for use in various environments

Strong Drive Capability for high current applications

Reliability in Harsh Conditions assured by temperature tolerance

Easy Integration offered by standard 8-SOIC Surface Mount Package

Versatility with compatibility across various MOSFET and IGBT technologies