Manufacturer Part Number
TC429EOA
Manufacturer
microchip-technology
Introduction
The TC429EOA is a high-speed power MOSFET and IGBT gate driver specifically designed to control N-Channel and P-Channel MOSFETs in power management applications.
Product Features and Performance
Low-side single-channel driver configuration
Compatible with N-Channel and P-Channel MOSFET gates
Supply voltage range from 7V to 18V
Logic input thresholds: VIL 0.8V, VIH 2.4V
Peak output current (source/sink) of 6A
Fast rise and fall times of 23ns and 25ns, respectively
Operating temperature range from -40°C to +150°C
Surface mount 8-SOIC package
Product Advantages
High output current capability enhances power efficiency
Fast switching speeds improve performance in high-frequency applications
Wide operating temperature range ensures reliability in extreme conditions
Low logic input thresholds provide compatibility with a variety of control signals
Key Technical Parameters
Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 7V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 6A
Rise / Fall Time (Typ): 23ns, 25ns
Operating Temperature: -40°C ~ 150°C
Quality and Safety Features
The TC429EOA is designed and manufactured by microchip-technology, ensuring high reliability and performance consistency. Its robust operating temperature range guarantees stable operation even under extreme conditions.
Compatibility
Compatible with N-Channel and P-Channel MOSFETs, allowing for versatile use across varied power management applications.
Application Areas
The TC429EOA is ideal for driving power MOSFETs in applications such as DC-DC converters, motor controls, and power supplies among others.
Product Lifecycle
As of the knowledge cutoff date, the TC429EOA is in an Active product status, with no current indications of nearing discontinuation. Users are advised to consult microchip-technology for the latest product lifecycle information.
Several Key Reasons to Choose This Product
High-speed switching capability enhances power efficiency in high-frequency operating conditions.
Robust peak output current for high power applications.
Flexible supply voltage range and low logic input thresholds ensure compatibility with various system designs.
Designed for a wide range of temperatures, offering reliability in various operating environments.
Simplifies power management system design with its ability to drive both N-Channel and P-Channel MOSFETs.
The product is actively supported by microchip-technology, ensuring availability and technical support.