MIC4420YN - Microchip Technology

Manufacturer Part Number

MIC4420YN

Manufacturer

Microchip Technology

Introduction

The MIC4420YN is a high-speed, low-side gate driver designed for driving N-Channel and P-Channel MOSFETs, part of Microchip Technology's Power Management ICs.

Product Features and Performance

Drives N-Channel and P-Channel MOSFETs

Low-side gate driving configuration

High peak output current of 6A for both sourcing and sinking

Fast switching with rise and fall times of 12ns and 13ns respectively

Wide operating voltage range from 4.5V to 18V

Logic input compatible, with VIH of 2.4V and VIL of 0.8V

High operating temperature range from -40°C to 150°C

Product Advantages

Capable of driving a wide variety of MOSFETs in various applications

Ensures rapid switching of the MOSFET to minimize power loss

High current capability allows for driving large loads

Wide voltage range provides versatility across various power levels

Suitable for harsh environmental conditions due to its broad temperature range

Key Technical Parameters

Supply Voltage: 4.5V ~ 18V

Logic Voltage VIH: 2.4V, VIL: 0.8V

Current Peak Output (Source/Sink): 6A

Rise / Fall Time (Typ): 12ns / 13ns

Operating Temperature: -40°C ~ 150°C (TJ)

Quality and Safety Features

Robust thermal performance with a maximum operating temperature of 150°C

High reliability through rigorous testing across its operating temperature range

Compatibility

Compatible with both N-Channel and P-Channel MOSFETs

Suitable for a wide operating voltage range for diverse applications

Application Areas

Power supply units

Motor control systems

LED lighting systems

High-speed switching circuits

Product Lifecycle

Currently marked as Active, indicating stable production without immediate risk of discontinuation

Long product lifecycle typical of power management components

Several Key Reasons to Choose This Product

High-speed performance ensures efficient MOSFET switching

High peak output current capability for driving significant loads

Flexibility in driving both N-Channel and P-Channel MOSFETs

Wide operational range in both supply voltage and temperature

Proven reliability and safety for demanding applications