MIC4123YME-TR - Microchip Technology

Manufacturer Part Number

MIC4123YME-TR

Manufacturer

Microchip Technology

Introduction

High-performance dual channel MOSFET gate driver IC

Designed for driving N-channel and P-channel MOSFETs

Product Features and Performance

Operates from 4.5V to 20V supply voltage range

Independent dual channel operation

3A peak source and sink current capability per channel

Ultra-fast 11ns typical rise and fall times

Low input to output propagation delay

Input logic compatible with 3.3V and 5V systems

Thermal shutdown and under-voltage lockout protection

Product Advantages

Efficient MOSFET driver solution

Compact SOIC-8 package with exposed pad for improved thermal performance

Suitable for a wide range of power conversion applications

Key Technical Parameters

Supply Voltage Range: 4.5V to 20V

Output Current (Source/Sink): 3A/3A

Rise/Fall Time (Typical): 11ns/11ns

Operating Temperature Range: -40°C to +125°C

Quality and Safety Features

RoHS3 compliant

Thermal shutdown and under-voltage lockout protection

Compatibility

Suitable for driving N-channel and P-channel MOSFETs

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Battery chargers

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation.

Replacement or upgrade options may be available from Microchip Technology.

Several Key Reasons to Choose This Product

High-performance dual channel MOSFET gate driver with fast switching capability

Operates over a wide supply voltage range (4.5V to 20V)

Compact SOIC-8 package with exposed pad for improved thermal performance

Robust protection features including thermal shutdown and under-voltage lockout

Suitable for a wide range of power conversion and motor control applications