Manufacturer Part Number
MD1213K6-G
Manufacturer
microchip-technology
Introduction
Power Management Integrated Circuit for Gate Driving
Product Features and Performance
High-frequency operation capability
Low rise and fall times for reduced switching losses
Built-in 2A peak current drive strength for high efficiency
Supports both N-Channel and P-Channel MOSFETs
Wide supply voltage range supporting various applications
Non-Inverting input to simplify signal routing
Product Advantages
High peak output current for driving larger gates
Fast switching performance for high-efficiency applications
Thermal protection features for safety and reliability
Compact packaging for space-sensitive designs
Operates over a wide temperature range suitable for harsh environments
Key Technical Parameters
Half-Bridge Driven Configuration
Independent Channel Type
2 Number of Drivers
Voltage - Supply: 4.5V ~ 13V
Logic Voltage - VIL, VIH: 0.3V, 1.2V
Current - Peak Output: 2A Source, 2A Sink
Rise / Fall Time: 6ns typical
Operating Temperature: -20°C ~ 125°C
Quality and Safety Features
Extended operating temperature range for reliability
Integrated protection circuits to ensure device longevity
Compatibility
Compatible with N-Channel and P-Channel MOSFETs
Easily integrated into a variety of power systems due to standard logic voltage levels
Application Areas
Motor controllers
Switching power supplies
Class D amplifiers
Power converters
Product Lifecycle
Product status: Active
No indication of discontinuation, replacements, or upgrades provided
Several Key Reasons to Choose This Product
Offers high-speed switching for power efficiency improvements
Dual channel, independent gate driving for flexibility in various applications
Broad operating temperature range fits industrial and automotive requirements
Surface mount QFN package ideal for modern compact electronic assemblies
Strong support and proven track-record of microchip-technology products