Manufacturer Part Number
JANTX2N2907AUA
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Military-grade, MIL-PRF-19500/291 series
Wide operating temperature range: -65°C to 200°C
High power rating: 500 mW
High collector-emitter breakdown voltage: 60 V
High collector current: 600 mA
Low collector cutoff current: 50 nA
Low collector-emitter saturation voltage: 1.6 V @ 50 mA, 500 mA
High DC current gain: 100 min @ 150 mA, 10 V
Product Advantages
Robust military-grade construction
Wide temperature range for harsh environments
High power handling and voltage/current capabilities
Low saturation voltage for efficient operation
High gain for amplification and switching applications
Key Technical Parameters
Package: 4-SMD, No Lead
RoHS: Non-compliant
Manufacturer's packaging: UA
Supplier Device Package: UA
Quality and Safety Features
Military-grade design and manufacturing process
Rigorous testing and screening to meet MIL-PRF-19500/291 standards
Compatibility
Commonly used in military, industrial, and high-reliability applications
Application Areas
Amplifiers
Switches
Power supplies
Motor controls
Telecommunications equipment
Product Lifecycle
This is an active, long-established product
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent reliability and performance in harsh environments
Military-grade quality and testing
High power handling and voltage/current capabilities
Low saturation voltage for efficient operation
High gain for versatile amplification and switching applications