JANS2N2222AUB - Microchip Technology

Manufacturer Part Number

JANS2N2222AUB

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product

Transistor Bipolar (BJT) Single

Product Features and Performance

Rated for military applications (MIL-PRF-19500/255)

Wide operating temperature range: -65°C to 200°C

High power rating: 500 mW

High collector-emitter breakdown voltage: 50 V

High collector current: 800 mA

Low collector cutoff current: 50 nA

Low collector-emitter saturation voltage: 1 V @ 50 mA, 500 mA

High DC current gain: 100 min. @ 150 mA, 10 V

Product Advantages

Suitable for military and high-reliability applications

Excellent thermal and electrical performance

Compact surface mount package

Key Technical Parameters

Power Rating: 500 mW

Collector-Emitter Breakdown Voltage: 50 V

Collector Current: 800 mA

Collector Cutoff Current: 50 nA

Collector-Emitter Saturation Voltage: 1 V @ 50 mA, 500 mA

DC Current Gain: 100 min. @ 150 mA, 10 V

Quality and Safety Features

RoHS non-compliant

Military-grade specification (MIL-PRF-19500/255)

Compatibility

Surface mount package (4-SMD, No Lead)

Application Areas

Military and aerospace applications

Industrial control systems

High-reliability electronics

Product Lifecycle

This is an established product, not nearing discontinuation

Replacement and upgrade options may be available

Key Reasons to Choose This Product

Proven reliability and performance in military and high-reliability applications

Excellent thermal and electrical characteristics

Compact and compatible surface mount package

Suitable for a wide range of industrial and aerospace applications