AT24MAC602-STUM-T - Microchip Technology

Manufacturer Part Number

AT24MAC602-STUM-T

Manufacturer

Microchip Technology

Introduction

EEPROM memory device for embedded applications

Product Features and Performance

Non-Volatile EEPROM

Programmable and erasable memory technology

Small memory size 2Kbit

Organized as 256 x 8 bits

I2C serial interface with up to 1 MHz clock frequency

Fast write cycle time of 5ms for word or page

Access time of 550 ns

Wide supply voltage range from 1.7V to 5.5V

Suitable for operation in temperatures -40°C to 85°C

Product Advantages

Retains data without power

Compatible with a wide range of voltages

Suitable for harsh temperature environments

Easy to integrate with serial interface

Compact SOT-23-5 package for space-constrained applications

Key Technical Parameters

Memory Size: 2Kbit

Memory Organization: 256 x 8

Memory Interface: I2C

Clock Frequency: 1 MHz

Write Cycle Time: 5ms

Access Time: 550 ns

Voltage Supply: 1.7V to 5.5V

Operating Temperature: -40°C to 85°C

Quality and Safety Features

Built-in error detection and correction

High reliability due to non-volatility

Robust communication via I2C interface

Compatibility

I2C bus protocol applicable for multiple device communication

Adaptable with various microcontrollers and processors

Surface Mount compatible with SOT-23-5 footprint

Standard operating voltage and temperature range

Application Areas

Embedded systems

Consumer electronics

Industrial automation

Data logging

Real-time clocks

System configuration settings

Product Lifecycle

Active product status

Available in standard packaging Tape & Reel (TR)

No near discontinuation reported

Replacements or upgrades can be sourced from the AT24MAC series

Several Key Reasons to Choose This Product

Reliable data storage with EEPROM technology

Flexible and easy to use I2C interface

Suitable for a wide range of applications due to compact form factor

Long-term availability and support from Microchip Technology

Proven performance in varying temperature conditions

Good choice for low-density memory applications where data persistence is crucial