APT66M60L - Microchip Technology

Manufacturer Part Number

APT66M60L

Manufacturer

Microchip Technology

Introduction

High-power N-channel MOSFET with low on-resistance for high-efficiency power conversion applications.

Product Features and Performance

High drain-to-source breakdown voltage of 600V

Low on-resistance of 190mOhm @ 33A, 10V

High continuous drain current of 70A at 25°C

Wide operating temperature range of -55°C to 150°C

Low input capacitance of 13190pF @ 25V

High power dissipation of 1135W at 25°C

Product Advantages

Excellent performance for high-efficiency power conversion

Suitable for a wide range of power applications

Robust design for reliable operation

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 190mOhm @ 33A, 10V

Continuous Drain Current (Id): 70A @ 25°C

Input Capacitance (Ciss): 13190pF @ 25V

Power Dissipation (Tc): 1135W

Quality and Safety Features

RoHS3 compliant

Suitable for high-power, high-efficiency applications

Robust design for reliable operation

Compatibility

Through-hole mounting

TO-264-3, TO-264AA package

Application Areas

High-efficiency power conversion

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options may be available

Key Reasons to Choose This Product

Excellent performance for high-efficiency power conversion

Wide operating temperature range and high power dissipation

Robust and reliable design

Suitable for a variety of high-power applications

Proven track record and technical support from Microchip Technology