Manufacturer Part Number
APT50N60JCCU2
Manufacturer
Microchip Technology
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high voltage rating
Product Features and Performance
600V drain-to-source voltage rating
50A continuous drain current at 25°C
Low on-resistance of 45mΩ @ 22.5A, 10V
High input capacitance of 6800pF @ 25V
290W maximum power dissipation
Product Advantages
Excellent efficiency and low power loss
Suitable for high-voltage, high-current applications
Robust and reliable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 45mΩ @ 22.5A, 10V
Drain current (Id): 50A @ 25°C
Input capacitance (Ciss): 6800pF @ 25V
Power dissipation (Pd): 290W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Compatible with SOT-227 package
Suitable for chassis mount applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in production
Replacement or upgraded models may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and low power loss for high-performance applications
Robust and reliable performance in high-voltage, high-current environments
Suitable for a wide range of power electronics and motor control applications
RoHS3 compliance and high-temperature operation capability
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