Manufacturer Part Number
APT50M50JVR
Manufacturer
Microchip Technology
Introduction
High-performance N-channel power MOSFET transistor for high-voltage, high-current applications
Product Features and Performance
High drain-to-source voltage rating of 500V
Low on-resistance of 50mΩ @ 500mA, 10V
High continuous drain current of 77A @ 25°C
Low input capacitance of 19,600pF @ 25V
Fast switching with low gate charge of 1,000nC @ 10V
Product Advantages
Excellent power handling capability
Efficient power conversion with low conduction losses
Suitable for high-voltage, high-current applications
Fast switching for improved system efficiency
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 500V
On-Resistance (Rds(on)): 50mΩ @ 500mA, 10V
Continuous Drain Current (Id): 77A @ 25°C
Input Capacitance (Ciss): 19,600pF @ 25V
Gate Charge (Qg): 1,000nC @ 10V
Quality and Safety Features
RoHS3 compliant
ISOTOP package for improved thermal performance
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and medical equipment
Product Lifecycle
This product is an active, in-production part
Replacement and upgrade options are available
Key Reasons to Choose This Product
Excellent power handling capability for high-voltage, high-current applications
Low on-resistance and fast switching for efficient power conversion
Robust and reliable performance in industrial and high-power applications
Comprehensive technical parameters and safety features
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