Manufacturer Part Number
APT5010JVRU2
Manufacturer
Microchip Technology
Introduction
High-power N-channel MOSFET transistor suitable for a variety of power conversion and control applications.
Product Features and Performance
500V drain-source voltage
100mΩ maximum on-resistance
44A continuous drain current at 25°C
450W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 7410pF
Fast switching capabilities
Product Advantages
Efficient power conversion and control
High reliability and performance
Suitable for harsh environments
Compact and easy to integrate
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 100mΩ
Continuous drain current (Id): 44A
Input capacitance (Ciss): 7410pF
Power dissipation (Ptot): 450W
Quality and Safety Features
RoHS3 compliant
Robust SOT-227 package
Designed for high reliability and safety
Compatibility
Suitable for a wide range of power conversion and control applications
Compatible with various electronic systems and circuits
Application Areas
Power supplies
Motor drives
Inverters
Industrial and medical equipment
Automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capabilities
Efficient power conversion and control
Reliable performance in harsh environments
Compact and easy to integrate
RoHS compliance for environmental responsibility
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