Manufacturer Part Number
APT39M60J
Manufacturer
Microchip Technology
Introduction
High-power N-channel MOSFET transistor
Designed for high-power switching applications
Product Features and Performance
Drain-source voltage up to 600 V
Continuous drain current up to 42 A (at 25°C case temperature)
Low on-resistance of 110 mΩ (max. at 28 A, 10 V)
Fast switching speed
High power dissipation of 480 W (at 25°C case temperature)
Wide operating temperature range from -55°C to 150°C
Product Advantages
Excellent power handling capability
Efficient thermal management
Reliable and robust performance
Key Technical Parameters
Drain-source voltage (Vdss): 600 V
Gate-source voltage (Vgs): ±30 V
On-resistance (Rds(on)): 110 mΩ (max. at 28 A, 10 V)
Continuous drain current (Id): 42 A (at 25°C case temperature)
Input capacitance (Ciss): 11300 pF (max. at 25 V)
Gate charge (Qg): 280 nC (max. at 10 V)
Quality and Safety Features
RoHS3 compliant
ISOTOP package for improved thermal performance and reliability
Compatibility
Suitable for a wide range of high-power switching applications, such as power supplies, motor drives, and industrial equipment
Application Areas
Power conversion and control
Motor drives
Industrial and commercial equipment
Renewable energy systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgraded products may be available in the future, but the exact timeline is unknown.
Key Reasons to Choose This Product
Excellent power handling capability with high drain-source voltage and continuous drain current
Low on-resistance for efficient power conversion
Fast switching speed for high-frequency applications
Wide operating temperature range for reliability in harsh environments
Robust and reliable ISOTOP package design
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