Manufacturer Part Number
APT21M100J
Manufacturer
Microchip Technology
Introduction
High-performance power MOSFET device designed for high-power switching applications
Product Features and Performance
1000V drain-to-source voltage rating
380mΩ max on-resistance
21A continuous drain current at 25°C
8500pF max input capacitance
462W max power dissipation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent high-voltage and high-power handling capabilities
Low on-resistance for high efficiency
High current capacity
Robust and reliable performance
Key Technical Parameters
Drain-to-source voltage (Vdss): 1000V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 380mΩ @ 16A, 10V
Continuous drain current (Id): 21A @ 25°C
Input capacitance (Ciss): 8500pF @ 25V
Power dissipation (Ptot): 462W @ Tc
Quality and Safety Features
RoHS3 compliant
ISOTOP package for high thermal performance
Compatibility
Suitable for high-power switching applications, such as motor drives, power supplies, and inverters
Application Areas
Industrial motor drives
Power supplies
Inverters
Other high-power switching applications
Product Lifecycle
Currently in production. No announced plans for discontinuation.
Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Low on-resistance for high efficiency
High current capacity
Wide operating temperature range
Robust and reliable performance
RoHS3 compliance for environmental safety
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