Manufacturer Part Number
APT15GP90BDQ1G
Manufacturer
Microchip Technology
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) for use in power electronics applications
Product Features and Performance
900V collector-emitter breakdown voltage
43A maximum collector current
250W maximum power rating
PT (punch-through) IGBT structure
Low conduction losses with Vce(on) of 3.9V @ 15V, 15A
Fast switching with turn-on/off time of 9ns/33ns
60nC gate charge
Product Advantages
Robust and reliable performance
Efficient power conversion
Suitable for high-voltage, high-current applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 900V
Current Collector (Ic) (Max): 43A
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 15A
Gate Charge: 60nC
Current Collector Pulsed (Icm): 60A
Switching Energy: 200J (off)
Td (on/off) @ 25°C: 9ns/33ns
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
TO-247 [B] package
Through-hole mounting
Application Areas
Power electronics
Inverters
Motor drives
Welding equipment
UPS systems
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose This Product
High voltage and current ratings for high-power applications
Efficient performance with low conduction losses
Fast switching capabilities for high-frequency operation
Robust and reliable design for demanding environments
Compatibility with standard TO-247 package and through-hole mounting
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