Manufacturer Part Number
APL1001J
Manufacturer
Microchip Technology
Introduction
High-power N-channel MOSFET transistor
Product Features and Performance
1000V drain-to-source voltage
600mOhm maximum on-resistance
18A continuous drain current at 25°C
7200pF maximum input capacitance
520W maximum power dissipation
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power handling capability
Low on-resistance for high efficiency
High voltage tolerance
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1000V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 600mOhm @ 500mA, 10V
Drain Current (Id): 18A (Tc)
Input Capacitance (Ciss): 7200pF @ 25V
Power Dissipation (Pd): 520W (Tc)
Quality and Safety Features
MOSFET technology for high reliability
ISOTOP package for improved thermal performance
Meets industrial temperature range requirements
Compatibility
Suitable for chassis mount applications
Application Areas
Power supplies
Motor drives
Industrial electronics
High-voltage switching applications
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from Microchip Technology
Key Reasons to Choose This Product
Exceptional power handling capabilities
Low on-resistance for high efficiency
Wide voltage and temperature operating range
Robust and reliable design for industrial applications
Compatibility with chassis mount configurations
