Manufacturer Part Number
2N3700UB
Manufacturer
Microchip Technology
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
Operates in a temperature range of -65°C to 200°C (TJ)
Maximum Power Dissipation: 500 mW
Maximum Collector-Emitter Breakdown Voltage: 80 V
Maximum Collector Current: 1 A
Maximum Collector Cutoff Current: 10 nA
Collector-Emitter Saturation Voltage: 500 mV @ 50 mA, 500 mA
Minimum DC Current Gain (hFE): 50 @ 500 mA, 10 V
Surface Mount Mounting
Product Advantages
Wide operating temperature range
High power handling capability
High breakdown voltage
High collector current capacity
Low collector cutoff current
Low collector-emitter saturation voltage
Suitable for surface mount applications
Key Technical Parameters
Power Dissipation: 500 mW
Collector-Emitter Breakdown Voltage: 80 V
Collector Current: 1 A
Collector Cutoff Current: 10 nA
Collector-Emitter Saturation Voltage: 500 mV @ 50 mA, 500 mA
DC Current Gain (hFE): 50 @ 500 mA, 10 V
Quality and Safety Features
RoHS non-compliant
Compatibility
Compatible with various electronic circuits and applications
Application Areas
Suitable for use in a wide range of electronic devices and circuits, such as amplifiers, switches, and power supplies
Product Lifecycle
Existing product, not nearing discontinuation
Replacement or upgrade options may be available
Several Key Reasons to Choose This Product
Wide operating temperature range
High power handling capability
High breakdown voltage
High collector current capacity
Low collector cutoff current
Low collector-emitter saturation voltage
Suitable for surface mount applications
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