2N2369AUB - Microchip Technology

Manufacturer Part Number

2N2369AUB

Manufacturer

Microchip Technology

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT) Single

Product Features and Performance

Operating Temperature Range: -65°C to 200°C (TJ)

Power Dissipation: 360 mW (Max)

Collector-Emitter Breakdown Voltage: 20 V (Max)

Collector Cutoff Current: 400 nA (Max)

Collector-Emitter Saturation Voltage: 450 mV @ 10 mA, 100 mA

Transistor Type: NPN

DC Current Gain (hFE): 20 (Min) @ 100 mA, 1 V

Product Advantages

Wide operating temperature range

High power dissipation capability

Low collector cutoff current

Key Technical Parameters

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

Collector-Emitter Saturation Voltage

DC Current Gain (hFE)

Quality and Safety Features

RoHS non-compliant

Compatibility

Surface Mount (SMD) Package

Application Areas

General-purpose amplifier and switching applications

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

Wide operating temperature range

High power dissipation

Low collector cutoff current

Suitable for general-purpose amplifier and switching applications