Manufacturer Part Number
UCC5350SBD
Manufacturer
Texas Instruments
Introduction
Isolated gate driver IC
Provides gate drive signals for power MOSFETs and IGBTs
Product Features and Performance
1 channel
Rise/fall time of 10ns
Propagation delay of max. 100ns
Pulse width distortion of max. 20ns
Common mode transient immunity of min. 100kV/s
Operating temperature range of -40°C to 125°C
Product Advantages
Provides high-speed, high-current gate drive signals
Galvanic isolation up to 3000Vrms
Compact 8-SOIC package
Key Technical Parameters
Isolation voltage: 3000Vrms
Output current: 8.5A (high), 10A (low)
Output supply voltage: 3V to 15V
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with power MOSFETs and IGBTs
Application Areas
Switched-mode power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
High-speed, high-current gate drive capability
Galvanic isolation for safety and noise immunity
Compact and easy-to-use 8-SOIC package
Suitable for a wide range of power electronics applications