UCC27528DR - Texas Instruments

Manufacturer Part Number

UCC27528DR

Manufacturer

Texas Instruments

Introduction

High-Speed, Dual-Channel MOSFET/IGBT Gate Driver

Product Features and Performance

Capable of driving both N-Channel MOSFET and IGBT gates

High-speed gate drive with typical rise/fall times of 7ns/6ns

Capable of peak output current of 5A source/sink

Wide supply voltage range of 4.5V to 18V

Designed for high switching frequency power conversion applications

Product Advantages

High-performance gate driving

Wide operating voltage range

Suitable for both MOSFET and IGBT power switches

Fast transient response

Key Technical Parameters

Operating Temperature: -40°C to 140°C

Package: 8-SOIC (0.154", 3.90mm Width)

Mounting Type: Surface Mount

Supply Voltage Range: 4.5V to 18V

Number of Drivers: 2 Independent Channels

Driven Configuration: Low-Side

Gate Type: IGBT, N-Channel MOSFET

Rise/Fall Time (Typical): 7ns, 6ns

Peak Output Current (Source/Sink): 5A, 5A

Quality and Safety Features

RoHS3 Compliant

Compatibility

Suitable for use with a wide range of power semiconductor devices, including MOSFETs and IGBTs

Application Areas

High-frequency power conversion applications, such as switched-mode power supplies, motor drives, and renewable energy systems

Product Lifecycle

This product is an active, in-production device from Texas Instruments.

Several Key Reasons to Choose This Product

High-speed, high-current gate driving capabilities

Versatility in driving both MOSFETs and IGBTs

Wide operating voltage range

Compact surface-mount package

Compliance with RoHS3 environmental standards