UCC27524AQDRQ1 - Texas Instruments

Manufacturer Part Number

UCC27524AQDRQ1

Manufacturer

Texas Instruments

Introduction

The UCC27524AQDRQ1 is a dual low-side driver designed for driving IGBTs and N-Channel MOSFETs in various applications. It is part of Texas Instruments' power management gate drivers series, focusing on enhancing efficiency and performance.

Product Features and Performance

Dual independent channels

Appropriate for driving IGBT and N-Channel MOSFETs

Supply voltage range from 4.5V to 18V

Logic voltage levels of VIL = 1V and VIH = 2.3V

High peak output current of 5A (Source and Sink)

Non-inverting input type

Fast rise and fall times of 7ns and 6ns, respectively

Operates in extreme temperatures ranging from -40°C to +140°C

Product Advantages

Versatile voltage and logic level acceptance for flexible usage

High peak current capability for robust drive strength

Quick switching characteristics reduce power loss and improve efficiency

Capable of handling harsh environments making it ideal for automotive and industrial applications

Key Technical Parameters

Number of Drivers: 2

Gate Type Supported: IGBT, N-Channel MOSFET

Voltage Supply: 4.5V ~ 18V

Logic Voltage VIL, VIH: 1V, 2.3V

Current Peak Output: 5A (Source), 5A (Sink)

Rise / Fall Time (Typ): 7ns, 6ns

Operating Temperature: -40°C ~ 140°C

Quality and Safety Features

AEC-Q100 qualification for automotive-grade reliability

Built to operate reliably under extreme temperatures and driving conditions

Compatibility

Compatible with IGBTs and N-Channel MOSFETs

Suitable for a range of supply and logic voltage levels

Application Areas

Power management circuits

Automotive applications

High-performance industrial systems

Product Lifecycle

Product Status: Active

Still widely available and supported, not nearing discontinuation

Future replacements or upgrades may be developed but current model remains standard

Several Key Reasons to Choose This Product

Dual-driver capability allows control of two different gates independently

High-driving current enhances switching speed of connected MOSFETs/IGBTs

Fast switching times lead to reduced power dissipation and increased efficiency

Broad compatibility with several gate types and voltages ensures flexibility in usage

Rigorous automotive standard compliance ensures high reliability in demanding conditions