Manufacturer Part Number
UCC23313BDWYR
Manufacturer
Texas Instruments
Introduction
High-speed IGBT/MOSFET gate driver with integrated isolation barrier
Product Features and Performance
1-channel gate driver
3750Vrms isolation voltage
Wide operating voltage range of 14V to 33V
Fast rise/fall time of 28/25ns (max)
High output current of 4.5A/5.3A
Low propagation delay of 105ns (max)
High common-mode transient immunity of 150kV/s
Product Advantages
Integrated isolation barrier eliminates the need for external isolation components
High speed and high output current enable efficient switching of power devices
Wide operating voltage range supports a variety of power supply configurations
Compact 6-SOIC package for space-constrained applications
Key Technical Parameters
Supply voltage: 14V to 33V
Output current: 4.5A/5.3A
Isolation voltage: 3750Vrms
Rise/fall time: 28ns/25ns (max)
Propagation delay: 105ns (max)
Common-mode transient immunity: 150kV/s
Quality and Safety Features
RoHS3 compliant
CQC, UL, and VDE approved
Compatibility
Suitable for driving IGBT and MOSFET power devices
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial automation and control systems
Product Lifecycle
In active production
Replacement or upgrade options available from Texas Instruments
Key Reasons to Choose This Product
Integrated isolation barrier for simplified design
High-speed and high-current driving capabilities for efficient power device switching
Wide operating voltage range for versatile power supply compatibility
Compact package size for space-constrained applications
Robust safety and quality approvals