Manufacturer Part Number
UCC21220D
Manufacturer
Texas Instruments
Introduction
Dual-channel, high-speed, IGBT and MOSFET gate driver with integrated high-voltage isolation
Product Features and Performance
2-channel gate driver
Capable of driving high-power IGBT and MOSFET devices
High common-mode transient immunity of 100V/ns
Fast propagation delay of 40ns max
Low pulse width distortion of 5.5ns max
Rise/fall time of 5ns/6ns
Product Advantages
Integrated high-voltage isolation up to 3000Vrms
Wide operating voltage range of 9.2V to 18V
High output current drive of 4A/6A
Robust and reliable performance
Key Technical Parameters
Voltage isolation: 3000Vrms
Output current: 4A high, 6A low
Operating voltage: 9.2V to 18V
Propagation delay: 40ns max
Pulse width distortion: 5.5ns max
Rise/fall time: 5ns/6ns
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments with -40°C to 125°C operating temperature range
Compatibility
Compatible with high-power IGBT and MOSFET devices
Application Areas
Suitable for industrial motor drives, power supplies, and other power conversion applications
Product Lifecycle
Currently available, no indication of discontinuation
Key Reasons to Choose This Product
Integrated high-voltage isolation for safety and reliability
High common-mode transient immunity for robust performance
Fast switching characteristics for efficient power conversion
Wide operating voltage range and high output current drive
Proven reliability and quality from Texas Instruments