Manufacturer Part Number
TS3DDR4000ZBAR
Manufacturer
Texas Instruments
Introduction
High-Speed Analog Switch with Integrated Level Shifters
Product Features and Performance
Supports DDR2, DDR3, and DDR4 memory interfaces
Wide operating voltage range of 2.375V to 3.6V
Ultra-low on-state resistance of 11.2 ohms (max)
Wide -3dB bandwidth of 5.6GHz
2:1 multiplexer/demultiplexer circuit
Operates over a wide temperature range of -40°C to 85°C
Product Advantages
Enables high-speed data switching in memory applications
Compact 48-pin NFBGA (8x3) package
RoHS3 compliant
Key Technical Parameters
Package: 48-NFBGA (8x3)
Mounting Type: Surface Mount
Number of Channels: 1
-3dB Bandwidth: 5.6GHz
On-State Resistance (Max): 11.2 ohms
Multiplexer/Demultiplexer Circuit: 2:1
Supply Voltage: 2.375V to 3.6V
Quality and Safety Features
RoHS3 compliant
Compatibility
Compatible with DDR2, DDR3, and DDR4 memory interfaces
Application Areas
Memory applications
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Supports high-speed memory interfaces up to DDR4
Ultra-low on-state resistance for efficient signal switching
Wide operating voltage and temperature ranges for design flexibility
Compact package size for space-constrained applications
RoHS3 compliance for environmental regulations