Manufacturer Part Number
TPS51200DRCR
Manufacturer
Texas Instruments
Introduction
Voltage regulator for DDR memory power management
Product Features and Performance
Regulates output to address VTT requirements
Provides sink and source capability
Supports high-speed memory interfaces
Low output impedance for transient response
Ensures stable operation over time and temperature
Built-in soft-start feature to minimize inrush current
Product Advantages
High integration suitable for space-constrained applications
High precision for reliable DDR memory operation
Thermal shutdown protection for increased longevity
Compatible with various DDR generations
Key Technical Parameters
Input Voltage Range: 2.38V to 3.5V
Output: Adjustable to DDR requirements
Number of Outputs: 1
Operating Temperature: -40°C to 85°C
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-VSON (3x3)
Quality and Safety Features
Overcurrent protection
Thermal shutdown
UVLO (Under Voltage Lock Out)
Compatibility
Supports DDR, DDR2, DDR3, Low Power DDR3, DDR4 memory
Compatible with various memory systems requiring VTT termination
Application Areas
Memory modules for computers
High-speed data processing units
Networking hardware
Telecommunication systems
Product Lifecycle
Active status product
Not indicated as nearing discontinuation
Availability of replacements or upgrades not explicitly mentioned
Several Key Reasons to Choose This Product
Designed and manufactured by Texas Instruments, a reliable leader in semiconductor markets
Optimized for high-speed memory interface applications
Enhanced thermal performance for better reliability
Industry-standard packaging for simplified design-in process
Provides key protections and features for advanced power management systems
Support for a broad range of DDR memory technologies ensures flexibility and longevity in design compatibility