Manufacturer Part Number
SN75468DR
Manufacturer
Texas Instruments
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) Array
Product Features and Performance
7 NPN Darlington Transistors
High Voltage Capability: 100V Collector-Emitter Breakdown Voltage
High Current Capability: 500mA Collector Current
Low Saturation Voltage: 1.6V @ 500mA, 350mA Collector Current
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
Compact Surface Mount Package (16-SOIC)
Automotive-Grade AEC-Q100 Qualified
RoHS3 Compliant
Key Technical Parameters
Package: 16-SOIC (0.154", 3.90mm Width)
Voltage Collector Emitter Breakdown (Max): 100V
Current Collector (Ic) (Max): 500mA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA
Transistor Type: 7 NPN Darlington
Quality and Safety Features
RoHS3 Compliant
Automotive-Grade AEC-Q100 Qualified
Compatibility
Suitable for a wide range of electronic circuits and applications
Application Areas
Automotive electronics
Industrial control systems
Power supplies
Motor control
Lighting applications
Product Lifecycle
Currently in production
No known discontinuation plans
Replacement or upgrade options available from Texas Instruments
Several Key Reasons to Choose This Product
High voltage and current capability
Low saturation voltage for efficient power conversion
Compact surface mount package
Automotive-grade quality and reliability
RoHS3 compliance for environmental friendliness
Wide operating temperature range for diverse applications