Manufacturer Part Number
LM5113QDPRRQ1
Manufacturer
Texas Instruments
Introduction
The LM5113QDPRRQ1 is a power management integrated circuit designed for automotive applications.
Product Features and Performance
Drives N-channel MOSFETs in a half-bridge configuration
Independent dual channel operation
High peak output current capability (1.2A source, 5A sink)
Fast rise and fall times (7ns/3.5ns typical)
Under-voltage lockout for both channels
3V and 5V input logic compatible
Cross-conduction prevention logic
Product Advantages
High-efficiency operation reduces thermal stress
Dual independent channels allow for versatile designs
High peak current support for driving larger MOSFETs
Optimized for fast switching applications to improve performance
Key Technical Parameters
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
High Side Voltage - Max (Bootstrap): 100 V
Current - Peak Output (Source, Sink): 1.2A, 5A
Rise / Fall Time (Typical): 7ns/3.5ns
Operating Temperature: -40°C ~ 125°C (TJ)
Quality and Safety Features
AEC-Q100 qualified for automotive applications
Built-in under-voltage lockout ensures reliable operation under low voltage conditions
Thermal shutdown feature for additional safety
Compatibility
Compatible with standard surface mount technology
Compatible with 3.3V and 5V logic levels
Application Areas
Automotive powertrain systems
Body control modules
Automotive infotainment systems
Electric power steering
High-power LED drivers
Product Lifecycle
Active product status
Not indicated as nearing discontinuation
Several Key Reasons to Choose This Product
Qualified for automotive applications ensuring reliability and robustness
High current capability suited for high power applications
Fast switching capabilities enable high-efficiency power conversion
Multiple safety features for increased system protection
Dual channels provide design flexibility
LM5114BMFNS