LM5113QDPRRQ1 - Texas Instruments

Manufacturer Part Number

LM5113QDPRRQ1

Manufacturer

Texas Instruments

Introduction

The LM5113QDPRRQ1 is a power management integrated circuit designed for automotive applications.

Product Features and Performance

Drives N-channel MOSFETs in a half-bridge configuration

Independent dual channel operation

High peak output current capability (1.2A source, 5A sink)

Fast rise and fall times (7ns/3.5ns typical)

Under-voltage lockout for both channels

3V and 5V input logic compatible

Cross-conduction prevention logic

Product Advantages

High-efficiency operation reduces thermal stress

Dual independent channels allow for versatile designs

High peak current support for driving larger MOSFETs

Optimized for fast switching applications to improve performance

Key Technical Parameters

Driven Configuration: Half-Bridge

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage - Supply: 4.5V ~ 5.5V

High Side Voltage - Max (Bootstrap): 100 V

Current - Peak Output (Source, Sink): 1.2A, 5A

Rise / Fall Time (Typical): 7ns/3.5ns

Operating Temperature: -40°C ~ 125°C (TJ)

Quality and Safety Features

AEC-Q100 qualified for automotive applications

Built-in under-voltage lockout ensures reliable operation under low voltage conditions

Thermal shutdown feature for additional safety

Compatibility

Compatible with standard surface mount technology

Compatible with 3.3V and 5V logic levels

Application Areas

Automotive powertrain systems

Body control modules

Automotive infotainment systems

Electric power steering

High-power LED drivers

Product Lifecycle

Active product status

Not indicated as nearing discontinuation

Several Key Reasons to Choose This Product

Qualified for automotive applications ensuring reliability and robustness

High current capability suited for high power applications

Fast switching capabilities enable high-efficiency power conversion

Multiple safety features for increased system protection

Dual channels provide design flexibility