LM5105SD - Texas Instruments

Manufacturer Part Number

LM5105SD

Manufacturer

Texas Instruments

Introduction

High-side and low-side gate driver for half-bridge MOSFET configurations

Product Features and Performance

Dual high-speed drivers

Non-inverting inputs

High peak output current of 1.8A source and sink

Fast rise and fall times of 15ns

Supports voltages from 8V to 14V

Capable of handling high side voltages up to 118V (bootstrap)

Operates at temperatures ranging from -40°C to 125°C

Suited for N-Channel MOSFET gate driving

Product Advantages

High efficiency due to fast switching

Robust thermal performance

Enhanced circuit protection features

Optimized for easy PCB layout

Integrated under-voltage lockout (UVLO)

Key Technical Parameters

Driven Configuration: Half-Bridge

Channel Type: Synchronous

Number of Drivers: 2

Gate Type: N-Channel MOSFET

Voltage - Supply: 8V ~ 14V

Current - Peak Output: 1.8A source, 1.8A sink

High Side Voltage - Max: 118V (Bootstrap)

Rise / Fall Time: 15ns typical

Quality and Safety Features

Under-voltage lockout for reliable operation

Thermal shutdown protection

Short-circuit protection

Compatibility

Compatible with a wide range of N-Channel MOSFETs

Surface mount package for modern PCB designs

Application Areas

Switching power supplies

DC to AC power inverters

Motor drives

Power converter topologies

Product Lifecycle

Obsolete status

For replacements or upgrades, consult manufacturer's latest product offerings or alternative gate drivers

Several Key Reasons to Choose This Product

High peak current capability for efficient switching

Integrated protection features limit device failure

Designed for use in a variety of power management applications

Fast switching speeds to minimize power loss

Operational reliability from -40°C to 125°C