Manufacturer Part Number
LM5100ASD
Manufacturer
Texas Instruments
Introduction
The LM5100ASD is a high voltage gate driver designed for driving N-Channel MOSFETs in a half-bridge configuration.
Product Features and Performance
Drives N-Channel MOSFETs in a half-bridge configuration
Independent dual channels for flexible designs
Peak output current of 3A for both source and sink
Supports high side voltage up to 118V (Bootstrap)
Fast rise and fall times with 430ns and 260ns respectively
Operational over a wide temperature range of -40°C to 125°C
Product Advantages
High-current drive capability
Precision logic thresholds for better noise immunity
Robust thermal performance with exposed pad WDFN package
Integrated high-voltage diodes for bootstrap operation
Key Technical Parameters
Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9V to 14V
Logic Voltage - VIL: 2.3V
Current - Peak Output: 3A Source and Sink
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118V
Rise / Fall Time: 430ns / 260ns
Quality and Safety Features
Extended operating temperature range suitable for industrial applications
Robust package design for improved thermal performance
High reliability for demanding power environments
Compatibility
Compatible with various N-Channel MOSFETs in half-bridge topologies
Application Areas
Switched Mode Power Supplies (SMPS)
Motor Control
DC-DC Converters
Power Inverters
Product Lifecycle
Not For New Designs (NND)
However, replacements or upgrades may be available
Several Key Reasons to Choose This Product
High-voltage capability suitable for a wide range of power applications
Dual-channel flexibility allows for complex design integration
High peak output current ideal for driving large MOSFETs
Enhanced thermal properties ensure stability under various conditions
Packaged for automated assembly processes with Tape & Reel packaging option