Manufacturer Part Number
SH8M41TB1
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
RoHS3 Compliant
8-SOP Manufacturer's Packaging
8-SOIC (0.154", 3.90mm Width) Package / Case
8-SOP Supplier Device Package
Tape & Reel (TR) Packaging
150°C (TJ) Operating Temperature
2W Power Max
N and P-Channel Configuration
80V Drain to Source Voltage (Vdss)
130mOhm Rds On (Max) @ 3.4A, 10V
MOSFET (Metal Oxide) Technology
4A, 2.6A Continuous Drain (Id) Current @ 25°C
600pF Input Capacitance (Ciss) (Max) @ 10V
Logic Level Gate FET Feature
5V Vgs(th) (Max) @ 1mA
2nC Gate Charge (Qg) (Max) @ 5V
Surface Mount Mounting Type
Product Advantages
RoHS3 Compliance
Wide Temperature and Voltage Range
Low On-Resistance
High Current Capability
Logic Level Gate Drive
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Continuous Drain (Id) Current @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with various electronic circuits and systems
Application Areas
Suitable for a wide range of electronic applications that require high-performance power switching and control
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
RoHS3 compliance for environmental sustainability
Wide temperature and voltage range for versatile applications
Low on-resistance for efficient power handling
High current capability for demanding applications
Logic level gate drive for easy control and integration
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