Manufacturer Part Number
SCH2080KEC
Manufacturer
LAPIS Technology
Introduction
High voltage Silicon Carbide (SiC) MOSFET
Product Features and Performance
Operates at high temperatures up to 175°C junction temperature
High breakdown voltage of 1200V
Low on-resistance of 117mΩ @ 10A, 18V
High current capability of 40A continuous drain current
Product Advantages
Efficient power conversion with reduced power losses
Compact design due to high power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): +22V/-6V
On-Resistance (Rds(on)): 117mΩ @ 10A, 18V
Continuous Drain Current (Id): 40A @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-247 package for reliable thermal management
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Switch-mode power supplies
Motor drives
Renewable energy systems
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
High efficiency and power density
Robust performance at high temperatures
Low switching and conduction losses
Reliable operation in demanding applications
