Manufacturer Part Number
RUM001L02T2CL
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
20V Drain-Source Voltage
±8V Gate-Source Voltage
5Ω Typical On-Resistance
100mA Continuous Drain Current
150mW Power Dissipation
1pF Input Capacitance
Operating Temperature up to 150°C
Product Advantages
Low On-Resistance for efficient power switching
High-temperature operation capability
Small size surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 3.5Ω
Drain Current (Id): 100mA
Power Dissipation (Pd): 150mW
Input Capacitance (Ciss): 7.1pF
Quality and Safety Features
RoHS3 Compliant
Reliable MOSFET technology
Compatibility
Suitable for general power switching applications
Application Areas
Power management
Switching circuits
Amplifier circuits
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose
Excellent power handling and efficiency
Wide operating temperature range
Small, space-saving package
RoHS compliance for environmental safety
