Manufacturer Part Number
RTF025N03TL
Manufacturer
LAPIS Technology
Introduction
This is a N-Channel MOSFET transistor from LAPIS Technology.
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Vgs (Max) of ±12V
Low Rds On of 67mOhm @ 2.5A, 4.5V
Continuous Drain Current (Id) of 2.5A at 25°C
Input Capacitance (Ciss) of 270pF @ 10V
Power Dissipation (Max) of 800mW at Ta
Gate Charge (Qg) of 5.2nC @ 4.5V
Product Advantages
Low on-resistance for efficient power switching
Suitable for high power density applications
Robust design with good thermal performance
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max) of 1.5V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Quality and Safety Features
RoHS3 Compliant
Suitable for high temperature operation up to 150°C
Compatibility
Surface mount package (TUMT3)
Tape and reel packaging
Application Areas
Switched-mode power supplies
Motor drives
Power amplifiers
Industrial controls
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency due to low on-resistance
Robust design for high temperature and high power applications
Compatibility with common surface mount assembly processes
RoHS compliance for use in a wide range of applications
