RS1E321GNTB1 - Rohm Semiconductor

Manufacturer Part Number

RS1E321GNTB1

Manufacturer

LAPIS Technology

Introduction

High-performance N-channel MOSFET transistor with low on-resistance and high power handling capability.

Product Features and Performance

30V drain-source voltage rating

1mΩ maximum on-resistance at 32A drain current

32A continuous drain current at 25°C

80A continuous drain current at 100°C

2850pF maximum input capacitance

3W maximum power dissipation

N-channel MOSFET design

Product Advantages

Excellent power efficiency due to low on-resistance

High current capability for demanding applications

Compact surface-mount package

Key Technical Parameters

Vds: 30V

Vgs (max): ±20V

Rds(on) (max): 2.1mΩ @ 32A, 10V

Id (continuous): 32A @ 25°C, 80A @ 100°C

Ciss (max): 2850pF @ 15V

Pd (max): 3W

Quality and Safety Features

RoHS3 compliant

Reliable MOSFET construction

Compatibility

Compatible with standard surface-mount assembly processes

Application Areas

High-current power switching and control

Motor drives

Power supplies

Industrial and automotive electronics

Product Lifecycle

Current production part

Replacements and upgrades available

Key Reasons to Choose This Product

Excellent power efficiency and high current capability

Compact surface-mount package for space-constrained designs

Reliable MOSFET construction for long-term performance

Compatibility with standard manufacturing processes