Manufacturer Part Number
RE1C002UNTCL
Manufacturer
LAPIS Technology
Introduction
This is a discrete semiconductor product in the category of transistors - FETs, MOSFETs - Single.
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss) of 20V
Maximum Gate-Source Voltage (Vgs) of ±8V
On-Resistance (Rds On) of 1.2Ω @ 100mA, 2.5V
Continuous Drain Current (Id) of 200mA @ 25°C
Input Capacitance (Ciss) of 25pF @ 10V
Power Dissipation (Max) of 150mW @ 25°C
Product Advantages
Compact surface mount package (SC-89, SOT-490)
High current capability
Low on-resistance
Good high frequency performance
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)) of 1V @ 1mA
Drive Voltage Range: 1.2V (Max Rds On) to 2.5V (Min Rds On)
Quality and Safety Features
RoHS3 compliant
Compatibility
Surface mount package (SC-89, SOT-490)
Tape & Reel (TR) packaging
Application Areas
Switching applications
Power management circuits
Motor control
Automotive electronics
Product Lifecycle
Currently in active production
No known plans for discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power handling
Compact surface mount package for space-constrained designs
Good high frequency performance for switching applications
RoHS3 compliance for environmentally-friendly use
Availability in standard packaging for easy integration
