Manufacturer Part Number
RB160L-40TE25
Manufacturer
LAPIS Technology
Introduction
Discrete Semiconductor Product
Single Rectifier Diode
Product Features and Performance
Schottky Diode
Fast Recovery Time <= 500ns, > 200mA (Io)
Average Rectified Current (Io) of 1A
Reverse Leakage Current (Ir) of 100μA @ 40V
Forward Voltage (Vf) of 550mV @ 1A
Maximum Junction Temperature of 150°C
Product Advantages
Compact Surface Mount Package (DO-214AC, SMA)
Efficient Power Conversion
High-Speed Switching
Low Power Loss
Key Technical Parameters
Reverse Voltage (Vr) of 40V
Schottky Rectifier Technology
Surface Mount Packaging (PMDS)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Suitable for a variety of power conversion and switching applications
Application Areas
Power Supplies
Inverters
Converters
Motor Drives
Industrial Electronics
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose
High-performance Schottky rectifier characteristics
Efficient power conversion with low power loss
Compact and easy to integrate surface mount package
Compliance with RoHS3 environmental standards
Suitable for a wide range of power electronics applications