BR24G1MFJ-3AGTE2 - Rohm Semiconductor

Manufacturer Part Number

BR24G1MFJ-3AGTE2

Manufacturer

rohm-semi

Introduction

EEPROM memory device for data storage applications

Product Features and Performance

1Mbit memory size

128K x 8 memory organization

Non-Volatile EEPROM technology

I2C memory interface compatible

1 MHz Clock Frequency

5ms Write Cycle Time for Word/Page

Product Advantages

High reliability for data retention

Low-power consumption

Wide supply voltage range (1.7V to 5.5V)

Fast write cycles

Key Technical Parameters

Memory Size: 1Mbit

Memory Interface: I2C

Voltage - Supply: 1.7V ~ 5.5V

Operating Temperature: -40°C ~ 85°C (TA)

Quality and Safety Features

Stable data retention and endurance

Tight parametric controls during manufacturing

Compatibility

Standard I2C communication protocol

Compatible with 8-SOIC mounting surfaces

Application Areas

Consumer electronics

Industrial automation

Communication devices

Automotive applications

Product Lifecycle

Status: Active

Not nearing discontinuation

Replacements or upgrades available if necessary

Several Key Reasons to Choose This Product

High storage capacity for small form factor applications

Versatility across various supply voltages

Operates under a wide range of temperatures

Durable with a high data retention lifespan

EEPROM allows for byte-level read/write operations

Suited for devices requiring frequent or on-the-fly data updates