Manufacturer Part Number
2SK3018T106
Manufacturer
LAPIS Technology
Introduction
The 2SK3018T106 is a N-channel enhancement-mode power MOSFET transistor designed for general-purpose switching and amplification applications.
Product Features and Performance
N-channel MOSFET transistor
Drain-to-source voltage (Vdss) of 30V
Maximum gate-to-source voltage (Vgs) of ±20V
On-resistance (Rds(on)) of 8Ω at 10mA, 4V
Continuous drain current (Id) of 100mA at 25°C
Input capacitance (Ciss) of 13pF at 5V
Power dissipation (Pd) of 200mW at 25°C
Operating temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for efficient power switching
Wide operating voltage range
Small SC-70 surface-mount package
RoHS-compliant and lead-free
Key Technical Parameters
Drain-to-source voltage (Vdss): 30V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 8Ω @ 10mA, 4V
Continuous drain current (Id): 100mA @ 25°C
Input capacitance (Ciss): 13pF @ 5V
Power dissipation (Pd): 200mW @ 25°C
Quality and Safety Features
RoHS3 compliant
Halogen-free
Compatibility
The 2SK3018T106 is compatible with a wide range of electronic devices and systems that require a general-purpose power MOSFET transistor.
Application Areas
Switching power supplies
Motor drivers
Amplifiers
Audio equipment
Industrial control systems
Product Lifecycle
The 2SK3018T106 is an active and readily available product from LAPIS Technology. There are no plans for discontinuation, and suitable replacement or upgrade options are available.
Key Reasons to Choose This Product
Efficient power switching due to low on-resistance
Wide operating voltage range for versatile applications
Small surface-mount package for compact design
RoHS compliance and halogen-free construction for environmental responsibility
Readily available and actively supported by the manufacturer
2SK3018/T106LAPIS Technology